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APTM20DHM20T
Asymmetrical - Bridge MOSFET Power Module
VBUS VBUS SENSE Q1 CR3
VDSS = 200V RDSon = 20mW max @ Tj = 25C ID = 89A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G1 S1 OUT1 OUT2 Q4
CR2 G4 0/VBUS SENSE S4 0/VBU S NTC2
NTC1
VBUS SENSE
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 89 66 356 30 20 357 89 50 2500 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM20DHM20T - Rev 2 May, 2004
Tc = 25C
APTM20DHM20T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Tj = 25C Tj = 125C
Min 200
Typ
Max 100 500 20 5 100
Unit V A mW V nA
VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 75A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 75A RG = 5W Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 75A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 75A, RG = 5 Min Typ 6850 2180 97 112 43 47 28 56 81 99 463 455 608 531 J J ns Max Unit pF
nC
Diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/s IF = 100A VR = 133V di/dt = 200A/s Min
Tc = 90C
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 100 1 1.4 0.9 60 110 200 840
Max 1.1
Unit A V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
APTM20DHM20T - Rev 2 May, 2004
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
2-6
APTM20DHM20T
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 Min Typ Max 0.35 0.6 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e R 25
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
3-6
APTM20DHM20T - Rev 2 May, 2004
APTM20DHM20T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse 0.9
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 250
VGS=15&10V 9V
200 ID, Drain Current (A) 160 120 80 40 0
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
200 150 100 50 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 ID, Drain Current (A) 120
VGS=20V 7.5V 7V 6.5V 6V 5.5V
TJ=25C TJ=125C T J=-55C
2
3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 100 ID, DC Drain Current (A)
Normalized to VGS=10V @ 44.5A
80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150
APTM20DHM20T - Rev 2 May, 2004
VGS=10V
APT website - http://www.advancedpower.com
4-6
APTM20DHM20T
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area ON resistance vs Temperature
VGS=10V ID= 44.5A
1000
100
limited by RDSon
100s
1ms 10 Single pulse TJ=150C 10ms DC line
1
10 100 1000 VDS, Drain to Source Voltage (V)
10000
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A 10 TJ=25C VDS=100V 8 6 4 2 0 0 25 50 75 100 125 Gate Charge (nC)
APTM20DHM20T - Rev 2 May, 2004
VDS=160V
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM20DHM20T
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 0 25 50 75 100 125 150 ID, Drain Current (A) Switching Energy vs Current
VDS=133V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=5 TJ=125C L=100H
td(off) tr and tf (ns)
tf
120 100 80 60 40 20 0 0
tr
td(on)
25
50
75
100
125
150
ID, Drain Current (A) Switching Energy vs Gate Resistance 1500
1200 1000
Eon and Eoff (J)
Switching Energy (J)
800 600 400 200 0 0
VDS=133V RG=5 TJ=125C L=100H
Eon Eoff
1250 1000 750 500 250
VDS=133V ID=75A TJ=125C L=100H
Eoff
Eon
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
ID, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80
VDS=133V D=50% RG=5 TJ=125C
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage 1000
IDR, Reverse Drain Current (A)
350
100
TJ=150C TJ=25C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
APTM20DHM20T - Rev 2 May, 2004
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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